unisonic technologies co., ltd 8050s npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r206-001,f low voltage high current small signal npn transistor ? description the utc 8050s is a low voltage high current small signal npn transistor, designed for class b push-pull audio amplifier and general purpose applications. ? features *collector current up to 700ma *collector-emitter voltage up to 20v *complementary to utc 8550s sot-23 1 3 2 to-92 1 ? ordering information ordering number package pin assignment packing lead free halogen-free 1 2 3 8050sl-x-ae3-r 8050sg-x-ae3-r sot-23 e b c tape reel 8050sl-x-t92-b 8050sg-x-t92-b to-92 e c b tape box 8050sl-x-t92-k 8050sg-x-t92-k to-92 e c b bulk 8050SL-X-T92-R 8050sg-x-t92-r to-92 e c b tape reel ? marking (for sot-23 package)
8050s npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-001,f ? absolute maximum rating ( t a =25c, unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5 v collector current i c 700 ma collector dissipation(t a =25c) sot-23 p c 350 mw to-92 1 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = 100 a, i e = 0 30 v collector-emitter breakdown voltage bv ceo i c = 1ma, i b = 0 20 v emitter-base breakdown voltage bv ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 30v,i e = 0 1 ua emitter cut-off current i ebo v eb = 5v, i c = 0 100 na dc current gain(note) h fe1 v ce = 1v, i c = 1ma 100 400 h fe2 v ce = 1v, i c = 150 ma 120 h fe3 v ce = 1v, i c = 500ma 40 collector-emitter satu ration voltage v ce ( sat ) i c = 500ma, i b = 50ma 0.5 v base-emitter satura tion voltage v be ( sat ) i c = 500ma, i b = 50ma 1.2 v base-emitter satura tion voltage v be ( sat ) v ce = 1v, i c = 10ma 1.0 v current gain bandwidth product f t v ce = 10v, i c = 50ma 100 mhz output capacitance cob v cb = 10v, i e = 0, f = 1mhz 9.0 pf ? classification of h fe2 rank c d e range 120-200 160-300 280-400
8050s npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-001,f ? typical characteristics collector current, ic(ma) dc current gain, h fe saturation voltage (mv) collector current, ic(ma) current gain-bandwidth product, f(mhz) capacitance, cob (pf)
8050s npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-001,f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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